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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION With TO-202 package Low breakdown voltage High current High fT APPLICATIONS For audio frequency power amplifier and low speed switching applications Suitable for output stages of 3 to 5 watts car radio sets and car stereo
PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter DESCRIPTION
2SC1096
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB

PARAMETER Open base
Fig.1 simplified outline (TO-202) and symbol
ANG INCH
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current
SEM E
CONDITIONS
OND IC
TOR UC
VALUE 40 30 5 3 6 0.6
UNIT V V V A A A
Open emitter
Open collector
Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature
1.2 W 10 150 -55~150 ae ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=3A ;IB=0.3A IC=3A ;IB=0.3A IC=10mA; IB=0 VCB=30V;IE=0 VEB=3V; IC=0 IC=20mA ; VCE=5V IC=1.0A ; VCE=5V IE=0; VCB=10V;f=1.0MHz IC=0.1A ; VCE=5V 20 40 55 30 MIN
2SC1096
SYMBOL VCEsat VBEsat V(BR)CEO ICBO IEBO hFE-1 hFE-2 COB fT
TYP.
MAX 2.0 2.0
UNIT V V V
1.0 1.0 |I
|I
A A
250 pF MHz
IN
M
Transition frequency

L K
hFE-1 classifications N 40-60
50-100
ANG CH
80-160
EMIC ES
OND
TOR UC
65
120-250
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1096
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 outline dimensions
3


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